The main purpose of this work is to provide a design aid tool to improve device reliability and performance. The key reliability issues are the hot-electron induced oxide damages and electro-static discharge (ESD) damages. This paper addresses the integrated circuit industry needs for non-isothermal simulation in device reliability analysis, initial input factor sensitivity analysis and their software implementation. Paper presented at the Proceedings of SPIE - the International Society for Optical Engineering,, 3216 104-113.Įlectrostatic discharge, Hot-electron effect, Reliability, STADIUM, SOI STADIUM SOI/reliability simulator for the analysis of hot-electron and ESD induced degradation in non-isothermal device.
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